| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the forming method of a thin film pattern which is excellent in the uniformity of linewidth accuracy in the surface of a substrate and between substrates. <P>SOLUTION: A conductive film 5 is formed on the semiconductor substrate 1 through a gate insulating film 3, and a resist pattern 7 is formed on the conductive film 5. The conductive film 5 is is subject to anisotropic etching employing the resist pattern 7 as a mask under a state that the conductive film 5 is left on the whole surface of the gate insulating film 3. After removing the resist pattern 7, an oxide film 9 is grown on the exposed surface of the conductive film 5 by effecting oxidizing process. The surface of the conductive film 5 is exposed again by removing the oxide film 9, selectively. The conductive film 5 is is subject to the anisotropic etching until the gate insulating film 3 is exposed whereby the thin film pattern 5a composed of the conductive film 5 is formed on the gate insulating film 3. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
