| 摘要 |
PROBLEM TO BE SOLVED: To drastically improve the yield of a compound semiconductor single crystal by controlling the shape of the solid-liquid interface to be a convex form projected to the melt side in the whole growth process with a good reproducibility in a production method of the compound semiconductor single crystal by an LEC method. SOLUTION: The compound semiconductor single crystal 2 is grown under conditions that a cylinder 10, made of a high temperature heat resistant substance, having an inner diameter larger than the crystal diameter and an outer diameter smaller than the inner diameter of a crucible is installed around the compound semiconductor single crystal being pulled, and one end (a) of the cylinder made of the high temperature heat resistant substance is immersed in a liquid encapsulating agent 4, and the other end (b) of the cylinder is allowed to locate in the inert gas side of the interface between the liquid encapsulating agent 4 and the inert gas. COPYRIGHT: (C)2004,JPO&NCIPI
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