| 发明名称 |
Method for reducing free surface roughness of a semiconductor wafer |
| 摘要 |
The invention provides a method of reducing the roughness of the free surface of a wafer of semiconductor material by applying a rapid thermal annealing process under a pure argon atmosphere for a time sufficient to uniformly heat and smooth the free surface of the wafer.
|
| 申请公布号 |
US2004171257(A1) |
申请公布日期 |
2004.09.02 |
| 申请号 |
US20030750443 |
申请日期 |
2003.12.30 |
| 申请人 |
NEYRET ERIC;ECARNOT LUDOVIC |
发明人 |
NEYRET ERIC;ECARNOT LUDOVIC |
| 分类号 |
H01L21/02;H01L21/26;H01L21/302;H01L21/324;H01L21/762;H01L27/12;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
