发明名称 SEMICONDUCTOR PRODUCTION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide heat treatment equipment for a semiconductor wafer preventing the adhesion of a by-product to the vicinity of a furnace port, avoiding the deterioration of the productivity. SOLUTION: In a CVD device 10 with a process tube 11 forming a treatment chamber 14, a heater unit 32 heating the chamber 14 and a manifold 18, to which an exhaust tube 16 and a gas introducing tube 17 are connected, a protective cylinder 28 formed of a material having a corrosion-resistant performance more excellent than the forming material of the manifold is welded between the cylinder 28 and the inner peripheral surface of the manifold while holding a heat-insulating space 29 inside the manifold 18. Accordingly, since the lowering of the temperature of the cylinder can be inhibited by the space, the adhesion of the by-product on the cylinder can be prevented. Since the cylinder having the excellent corrosion-resistant performance is not corroded even when an etching gas used for a self cleaning is brought into contact, the frequency of the self cleaning can be increased, and the operation stop time of the CVD device is shortend and the productivity of the CVD device can be improved by reducing the frequency of a full cleaning by an increasing section. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004247655(A) 申请公布日期 2004.09.02
申请号 JP20030038047 申请日期 2003.02.17
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANIYAMA TOMOSHI
分类号 H01L21/22;H01L21/31;H01L21/324;(IPC1-7):H01L21/31 主分类号 H01L21/22
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