| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a high-quality, ultra-thin-film interface oxide layer 418 suitable for use as a high-permittivity gate insulating film 424 when manufacturing a semiconductor. SOLUTION: An oxidizer atmosphere containing oxygen and a reducing agent is used at a high temperature for growing the interface oxide layer 418. In the method, the oxygen grows the oxide layer 418 and the reducing agent decreases the growth. A growth speed in the oxide layer 418 can be controlled by adjusting a partial pressure obtained by multiplying the ratio of the reducing agent in a gaseous phase by total pressure. When the growth speed of the oxide layer 418 is controlled for delaying, a layer having a thickness of approximately 10 angstroms or less can be easily formed. When the oxide layer 418 is grown at a high temperature, a layer having a favorable bonding state and high quality can be produced and a product having better performance and reliability is generated. COPYRIGHT: (C)2004,JPO&NCIPI
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