发明名称 Method for forming refractory metal oxide layers with tetramethyldisiloxane
摘要 A method of forming (and apparatus for forming) refractory metal oxide layers, such as tantalum pentoxide layers, on substrates by using vapor deposition processes with refractory metal precursor compounds and ethers.
申请公布号 US6784049(B2) 申请公布日期 2004.08.31
申请号 US20020229653 申请日期 2002.08.28
申请人 MICRON TECHNOLOGY, INC. 发明人 VAARTSTRA BRIAN A.
分类号 C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/316;(IPC1-7):H01L21/824 主分类号 C23C16/40
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