| 摘要 |
<p>A description is given of a rewritable optical storage medium ( 10 ) comprising a substrate ( 1 ), a first dielectric layer ( 2 ), a phase-change recording layer ( 3 ) on the basis of Ge-Sb-Te, a second dielectric layer ( 4 ), and a metal reflective layer ( 5 ). The recording layer ( 3 ) is an alloy having the composition Ge<SUB>x</SUB>Sb<SUB>y</SUB>Te<SUB>z</SUB>, in atom %, wherein 0<x<15, 50<y<80, 10<z<30 and x+y+z=100, and the recording layer ( 3 ) has a thickness selected from the range of 7 to 18 nm. Such a medium ( 10 ) is suitable for high data rate recording with a data rate of larger than 25 Mb/s while the recording layer ( 6 ) remains relatively thin having a relatively high optical transparency.</p> |
