发明名称 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the yield of semiconductor devices by respectively forming the identification marks to each chip forming region and the backside region of a semiconductor wafer corresponding to such chip forming region before the step to form a bump region on each ship forming region. SOLUTION: A mark-forming layer 10 is provided at the backside 15Y of each semiconductor chip 15 to cover the backside 15Y. This mark-forming layer 10 is formed of a carbon-doped epoxy-based thermosetting resin. Various kinds of identification marks are formed on the mark-forming layer 10 and one of these identification marks is formed of the marks indicating the information pieces such as product name, manufacturer's name, type, manufacturing lot number, etc., as the common information in one semiconductor wafer. Moreover, such a mark is formed of the two-dimensional code mark that can record a large amount of information within a small area. Thereby, the yield of the semiconductor device can be improved.
申请公布号 SG105578(A1) 申请公布日期 2004.08.27
申请号 SG20030003598 申请日期 2000.03.21
申请人 HITACHI, LTD. 发明人 TOSHIO MIYAMOTO;HIDEKI TANAKA;ASAO NISHIMURA
分类号 H01L21/60;G01R31/26;H01L21/02;H01L21/48;H01L21/66;H01L21/98;H01L23/544 主分类号 H01L21/60
代理机构 代理人
主权项
地址