PRECURSOR OF ZIRCONIUM DIOXIDE, PREPARATION METHOD THEREOF AND METHOD FOR FORMING THIN FILM USING THE SAME

摘要

PURPOSE: A precursor of zirconium dioxide, a preparation method thereof and a method for forming thin film using the same are provided, which zirconium dioxide precursor has thermal stability and improved volatility, so that high quality of zirconium thin film can be formed. CONSTITUTION: The precursor of zirconium dioxide represented by formula (1) is provided, wherein R is C1-4 alkyl optionally containing fluor; and R' is C1-4 alkyl optionally containing fluor or SiR'3. The method for preparing the precursor of zirconium dioxide of formula (1) comprises reacting zirconium complex of formula (2) with alkali metal salt of alcohol of formula (3), wherein X is chlorine, bromine or iodine; and M is Li, Na or K. The method for preparing the precursor of zirconium dioxide of formula (1) comprises reacting zirconium complex of formula (2) with alcohol of formula (4) in the presence of tertiary amine. The method for forming thin film comprises carrying out MOCVD system(Metal-Organic Chemical Vapor Deposition Systems) or ALD(atomic layer deposition) using the precursor of zirconium dioxide of formula (1).