发明名称 Non-volatile latch circuit and a driving method thereof
摘要 Non-volatile latch circuit 10 of the present invention comprises ferroelectric capacitor 1 provided with a first electrode 1a, second electrode 1b, and ferroelectric film 1c that lies between these electrodes; reset terminal Tre that is connected to first electrode 1a and a CMOS inverter element 2 that is connected to second electrode 1b of ferroelectric capacitor 1; voltage switching terminal Tpl that applies a voltage to second electrode 1b; switching element 5 that is connected between second electrode 1b and second input terminal Tpl and switches a voltage applied to second electrode 1b; and set terminal Tse that applies a voltage for switching on or off switching element 5, wherein the voltage generated in second electrode 1b caused by polarization retained by ferroelectric film 1c is higher than the threshold voltage Vtn of NMISFET 4 of CMOS inverter element 2.
申请公布号 US2004164778(A1) 申请公布日期 2004.08.26
申请号 US20040785031 申请日期 2004.02.25
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO,. LTD. 发明人 TOYODA KENJI;OHTSUKA TAKASHI;MORIMOTO KIYOSHI
分类号 G11C11/22;H01L21/8246;H01L27/105;H03K3/356;H03K17/693;H03K19/0948;H03K19/185;(IPC1-7):G11C11/22 主分类号 G11C11/22
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