Organic electroluminescent device as flat panel display, has switching and driving thin film transistors, connection pattern with conductive polymeric material, organic electroluminescent layer on first electrode, and second electrode

摘要

An organic electroluminescent display comprises a switching thin film transistor that uses a semiconductor layer as a switching active layer; a driving thin film transistor that uses a semiconductor layer as a driving active layer; a connection pattern comprising a conductive polymeric material; an organic electroluminescent layer on first electrode; and a second electrode that contacts connection pattern. An organic electroluminescent device comprises first and second substrates facing and spaced apart from each other; a gate line (212) on an inner surface of the first substrate; a semiconductor layer over the gate line, and overlying a surface of the first substrate; a data line (240) crossing the gate line; a data ohmic contact layer under the data line, having the same shape as the data line; a power line (220) parallel to, or substantially parallel to, and spaced apart from the data line, comprising the same material as the gate line; a switching thin film transistor connected to the gate line and the data line, which uses the semiconductor layer as a switching active layer (228); a driving thin film transistor connected to the switching thin film transistor and the power line, which uses the semiconductor layer as a driving active layer (230); a connection pattern (260) connected to the driving thin film transistor, comprising a conductive polymeric material; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, which contacts the connection pattern. An independent claim is included for the production of an organic electroluminescent device, comprising forming a driving gate electrode, a gate line, and a power line on a first substrate using a first mask process; forming a first insulating layer and a semiconductor layer sequentially on the driving gate electrode, the gate line, and the power line; forming a first layer of silicon and a second layer of metal sequentially on the semiconductor layer; patterning the first and second layers sequentially using a second mask process to form a driving ohmic contact layer, a data ohmic contact layer, driving source and drain electrodes, and a data line, the driving ohmic contact layer being formed under the driving source and drain electrodes, and the data ohmic contact layer being formed under the data line; forming a second insulating layer having a source contact hole and a drain contact hole on the driving source and drain electrodes and the data line using a third mask process, the source contact hole exposing the driving source electrode, and the drain contact hole exposing the driving drain electrode; forming a connection pattern and a connection electrode of conductive polymeric material on the second insulating layer, the connection pattern being connected to the driving drain electrode through the drain contact hole, and the connection electrode being connected to the driving source electrode through the source contact hole; forming a first electrode on a second substrate; forming an organic electroluminescent layer on the first electrode; forming a second electrode of the organic electroluminescent layer; and attaching the first and second substrates such that the second electrode contacts the connection pattern.