发明名称 Semiconductor device and method for driving the same
摘要 A nonvolatile semiconductor storage element, which is provided with a floating gate electrode, and a dielectric capacitor and a ferroelectric capacitor both connected to the floating gate electrode. By applying voltage between a first polarization voltage supplying terminal and a second polarization voltage supplying terminal, polarization serving as information is generated in the ferroelectric film of the ferroelectric capacitor. Additionally, when a read-out voltage is applied between the ground terminal and the power source voltage terminal that are in connection with the source and drain regions, the MISFET is turned either on or off in correspondence to the state of the charge held in the floating gate electrode, and thus information within the floating gate electrode is read out.
申请公布号 US2004165430(A1) 申请公布日期 2004.08.26
申请号 US20040791781 申请日期 2004.03.04
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 OHTSUKA TAKASHI;MORITA KIYOYUKI;UEDA MICHIHITO
分类号 G11C11/22;G11C16/04;H01L21/8246;H01L27/115;H01L29/423;H01L29/788;(IPC1-7):G11C16/04 主分类号 G11C11/22
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