| 摘要 |
A manufacturing process of a stacked semiconductor device is described, comprising the following steps: integrating a plurality of electronic devices in a plurality of active areas realized in a semiconductor wafer (9a); distributing an adhesive layer on active areas, splitting the semiconductor wafer into a plurality of first dies, each one comprising at least one of the active areas; mounting the plurality of first dies, which are already equipped with the adhesive layer, on a support; and mounting a plurality of second dies on the adhesive layer. A stacked semiconductor device is also described, which comprises a first die mounted on a support, an intermediate adhesive layer and a second die mounted on the adhesive layer which is a polymeric layer. |
