| 摘要 |
PROBLEM TO BE SOLVED: To relax bending after a rear surface is ground, in a semiconductor device provided with a dielectric isolated substrate. SOLUTION: A supporting substrate is provided with an insulation film in a specified position therein, and it is ground so that the insulation film of the supporting substrate may be left in the rear surface grinding step of a final manufacturing step, thereby relaxing bending after the rear surface is ground. Thus, cracks in a passivation film or vacuum suction failure during transfer of wafers can be prevented. COPYRIGHT: (C)2004,JPO&NCIPI
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