| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxidation of a plug of a stacked ferroelectric memory cell. SOLUTION: The stacked ferroelectric memory cell 100 has a layer insulating film 12, a protrusion part 102 formed in the upper surface of the layer insulating film 12, a plug 114 provided through the layer insulating film 12 and the projecting part 102, a cap 104 electrically combined with the plug 114 at a flat top 104a, a lower electrode 120 with a brim 106 provided in a circumferential edge of the cap 104, and a ferroelectric film 22 and an upper electrode 24 provided on the lower electrode 120. COPYRIGHT: (C)2004,JPO&NCIPI
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