| 摘要 |
A dielectric film containing LaAlO3 and method of fabricating a dielectric film contained LaAlO3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO2. The LaAlO3 gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO3 gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence. A lanthanum sequence uses La(thd)3 (thd=2,2,6,6-tetramethl-3,5-heptanedione) and ozone. An aluminum sequence uses either trimethylaluminium, Al(CH3)3, or DMEAA, an adduct of alane (AlH3) and dimethylehtylamine [N(CH3)2(C2H5)], with distilled water vapor.
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