| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for precisely correcting a distortion of a mask pattern for exposure due to flexure of a stencil mask at a high speed, and to provide a method for manufacturing a mask for exposure to which the correcting method is applied. <P>SOLUTION: Exposure by the mask for exposure which has a pattern 2 for position shift measurement and exposure by a mask for light which has a pattern 1 for position shift measurement are both carried out for a photosensitive layer on a wafer. On the photosensitive layer, positions (x<SB>1</SB>to x<SB>4</SB>and y<SB>1</SB>to y<SB>4</SB>) of the pattern 2 of the mask for exposure are measured based upon the pattern 1 of the mask for light. This measurement is carried out over the entire area of a membrane where the mask pattern is formed to obtain a mask distortion distribution. According to data of it, corrections for canceling the mask distortion are made for mask pattern design data at a time. The mask distortion distribution obtained for one mask can be used as it is for a mask having the same mask material and mask structure with the mask. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
