发明名称 process for producing a Si-based alloy sputtering target, sputtering target and its application
摘要 A sputtering target is produced from a silicon-based alloy with an aluminum content of 5-50 wt.% by melting the alloy and vacuum-casting the alloy in a hollow cylindrical casting mold to produce tubular sections (5). An independent claim is also included for a tubular cathode comprising a sputtering target produced by the process.
申请公布号 EP1447458(A3) 申请公布日期 2004.08.25
申请号 EP20030025186 申请日期 2003.11.04
申请人 W.C. HERAEUS GMBH & CO. KG 发明人 HEINDEL, JOSEF;WEIGERT, MARTIN, DR.;KONIETZKA, UWE
分类号 B22D18/04;B22D15/02;B22D27/15;C22C28/00;C23C14/34 主分类号 B22D18/04
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