MOS power device with high integration density and manufacturing process thereof

摘要

A MOS power device having: a body (10); gate regions (34) on top of the body (10) and delimiting therebetween a window (40); a body region (35), extending in the body underneath the window; a source region (36), extending inside the body region (35) throughout the width of the window; body contact regions (43), extending through the source region up to the body region; source contact regions (46), extending inside the source region, at the sides of the body contact regions; a dielectric region (41) on top of the source region; openings (42, 45) traversing the dielectric region on top of the body and source contact regions (43, 46); and a metal region (50) extending above the dielectric region (41) and through the first and second openings (42, 45).