NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, ITS FABRICATION METHOD, SEMICONDUCTOR INTEGRATED CIRCUIT AND SYSTEM, IN WHICH AREA OF CELL MEMORY TRANSISTOR IS REDUCED

摘要

PURPOSE: A nonvolatile semiconductor memory device and its fabrication method, and a semiconductor integrated circuit and system are provided which reduces an area of a memory cell transistor and improve reliability of operation. CONSTITUTION: A number of word lines(WL1 - WL32) are arranged in a row direction. A bit line is arranged in a column direction orthogonal to the word line. A memory cell transistor is arranged in the column direction, and has a charge accumulation layer whose charge accumulation state is controlled by one of the plurality of word lines. A plurality of first selection transistors are arranged adjacently to the column direction on one side of the memory cell transistor, and selects the memory cell transistor. And the first selection gate lines(SGD1,SGD2,SGS1,SGS2) are connected to each gate of the first selection transistors.