METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING MIM CAPACITOR AND VIA CONTACT

摘要

PURPOSE: A method for fabricating a semiconductor device having an MIM(Metal-Insulator-Metal) capacitor and a via contact is provided to prevent the performance deterioration due to an RF etch process by performing a process for filling up a via contact hole and a process for forming a metal layer on a dielectric layer. CONSTITUTION: The first metal layers(810,910) for a via contact and a capacitor bottom electrode are formed on the first interlayer dielectric(700). The first capping layer(710) is formed on the first interlayer dielectric and the first metal layers. The second interlayer dielectric(720) is formed on the first capping layer. The first trench is formed by removing the second interlayer dielectric. The second metal layer(930) is formed to fill up the trench. The second capping layer is formed on the second interlayer dielectric and the second metal layer. The third interlayer dielectric(750) is formed on the second capping layer. A via contact and the second trench are formed to expose partially eached surface of the first and the second metal layers of the first and the second regions. The third metal layer(960) is formed to fill up the via contact hole and the second trench.