| 摘要 |
PROBLEM TO BE SOLVED: To reduce the inclination of the center of a far-field pattern in a semiconductor laser having a window structure where refractive index distribution is unsymmetrical to an MQW active layer. SOLUTION: An n-(Al0.66Ga0.34)0.5In0.5P lower clad layer 14, an active layer having a disordered window structure with an MQW structure, a p-(Al0.7Ga0.3)0.5In0.5P first upper clad layer 18, and an (Al0.66Ga0.34)0.5In0.5P second upper clad layer 22 are successively arranged on an n-GaAs substrate 12. The refractive index of the first upper clad layer 18 is made smaller than the refractive index of the lower clad layer 14, and the refractive index of the second upper clad layer 22 is made larger than the refractive index of the first upper clad layer 18, and made the same as the refractive index of the lower clad layer 14 so that the peak position of light intensity in the window structure of the active layer is made coincident or extremely close to the position of the active layer. COPYRIGHT: (C)2004,JPO&NCIPI
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