| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal polishing solution which exhibits a high chemomechanical polishing (CMP) rate and enables the preparation of an LSI less prone to cause corrosion, scratch, thinning, dishing, erosion, etc., to occur. SOLUTION: The metal polishing solution, used for chemomechanical polishing in producing a semiconductor device, contains a compound selected from among a phosphonic acid compound with a specified structure, a benzenesulfonic acid or sulfonate compound with a specified structure, and phosphoric acid or its water-soluble metal salt or its ammonium acid salt. COPYRIGHT: (C)2004,JPO&NCIPI
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