| 摘要 |
PROBLEM TO BE SOLVED: To prevent the situation in which the film remainder of a conductive film to be a capacitance upper electrode is generated on the sides of a capacitance lower electrode and a wiring. SOLUTION: A semiconductor apparatus has the capacitance lower electrode 111a and the leading-out wiring 111b formed on a first insulating film 110 formed on a semiconductor substrate 100 by the same process, a capacitance insulating film 112a formed on the lower electrode 111a and formed in a region inner than a region in which the lower electrode 111a is formed, and the capacitance upper electrode 113a formed on the insulating film 112a and formed in a region inner than a region in which the insulating film 112a is formed. COPYRIGHT: (C)2004,JPO&NCIPI
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