发明名称 STORAGE CELL, STORAGE CELL ARRANGEMENT, AND METHOD FOR THE PRODUCTION OF A STORAGE CELL
摘要 The invention relates to a storage cell, a storage cell arrangement, and a method for producing a storage cell. Said storage cell comprises a substrate that contains charge carriers having a first type of conductivity, a first source/drain area in a first surface zone of the substrate, and a second source/drain area in a second surface zone of the substrate. A channel area is provided in a surface zone of the substrate, which is located between the first and the second source/drain area, while a charge storage area is disposed above the channel area. Also provided is a control gate which is located above the charge storage area and is electrically insulated therefrom. A trench structure is formed in the substrate. Said trench structure comprises material that delivers charge carriers and is provided with charge carriers having a second type of conductivity, and an insulating area located between the substrate and at least one portion of the material delivering charge carriers. The first type of conductivity is different from the second type of conductivity such that a diode junction is formed between the substrate and the material of the trench structure, which delivers charge carriers. The storage cell is designed in such a way that electric charge carriers can be introduced from the material of the trench structure, which delivers charge carriers, into the charge storage area by applying predefined electrical potentials to the storage cell.
申请公布号 WO2004070841(A2) 申请公布日期 2004.08.19
申请号 WO2004DE00186 申请日期 2004.02.04
申请人 INFINEON TECHNOLOGIES AG;SCHULER, FRANZ 发明人 SCHULER, FRANZ
分类号 H01L21/336;H01L21/8246;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/336
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