| 摘要 |
A method for sensing the voltage on a floating gate in a floating gate circuit during a set mode is disclosed. The method includes the steps of: a) causing the floating gate circuit to enter into a set mode, wherein a first predetermined voltage is coupled to the gate of a second transistor in the floating gate circuit; b) causing the voltage on the floating gate to be sensed relative to the first voltage by a first transistor; c) causing an output voltage to be generated by the floating gate circuit; and d) causing the voltage on the floating gate to be modified as a function of the output voltage, including modifying the charge level on said floating gate under the control of a first tunnel device and a second tunnel device operating in dual conduction during said set mode, said first tunnel device formed between said floating gate and a first tunnel electrode and said second tunnel device formed between said floating gate and a second tunnel electrode; and e) repeating steps b) through d) until the voltage on the floating gate is approximately equal to the first voltage. |
