| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing process of a semiconductor device where the capacity between wires is reduced. SOLUTION: The semiconductor device 200 comprises a semiconductor substrate (non-illustrated), a second insulating film between wires 216 that is provided on the semiconductor substrate and is composed of ladder type siloxane hydride, a second protection film 217 provided on the second insulating film between wires 216, and upper layer wiring 270 formed in the second insulating film between wires 216 and the second protection film 217. In this case, the second insulating film between wires 216 and the second protection film 217 are composed of, for example an L-Ox<SP>TM</SP>film (R) and a silicon oxide film, respectively. COPYRIGHT: (C)2004,JPO&NCIPI |
