发明名称 |
Preparation of a structural element with an electrical contact region including preparation of epitaxially grown semiconductor series, used in the production of light emitting diodes |
摘要 |
<p>Preparation of a structural element with an electrical contact region by:preparation of an epitaxially grown semiconductor series including an n-conductive AlGaIlP or AlGaInSAs-based external layer with an active zone emitting electromagnetic radiation, and application of an electrical contact material, which includes Au and doping material to the external layer, this material containing at least one of Ge, Si, Sn, and Te, and tempering of the external layer. An independent claim is included for a structural element as described above.</p> |
申请公布号 |
DE102004004780(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
DE20041004780 |
申请日期 |
2004.01.30 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
ILLEK, STEFAN;PLOESL, ANDREAS;STAUSS, PETER;DIEPOLD, GUDRUN;PIETZONKA, INES;STEIN, WILHELM;WIRTH, RALPH;WEGLEITER, WALTER |
分类号 |
H01L33/00;H01L33/30;H01L33/40;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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