发明名称 |
VAPOR DEPOSITION SYSTEM AND METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition system and a vapor deposition method which can suppress the phenomenon that the film thickness of a multiplex thin-film layer on a substrate is made ununiform in a radial pattern periodicallly in its plane. SOLUTION: In the system in which evaporation sources 3a and 3b are heated so that evaporation points are moved at a prescribed period inside a vacuum chamber A to evaporate evaporation materials, so that the evaporation materials are vapor-deposited on the substrate 8 rotated at a fixed revolving speed to deposit the thin film of the evaporation materials, the revolving speed of the substrate 8 is made changeable. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004232006(A) |
申请公布日期 |
2004.08.19 |
申请号 |
JP20030019990 |
申请日期 |
2003.01.29 |
申请人 |
HITACHI METALS LTD;SHIN MEIWA IND CO LTD |
发明人 |
KOBAYASHI TOSHIO;NOGUCHI SHIN;TAKAHASHI HIDEJI;KIKUCHI KAZUO;ENDO KAZUHIRO;KOIZUMI YASUHIRO |
分类号 |
C23C14/32;C23C14/08;(IPC1-7):C23C14/32 |
主分类号 |
C23C14/32 |
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