Nonvolatile semiconductor memory device with MONOS type memory cell

摘要

A memory block of this flash memory includes 64x8 MONOS type memory cells arranged in 64 rows and 8 columns, 64 word lines respectively provided corresponding to 64 rows, bit lines respectively provided corresponding to 8 columns, and a source line commonly provided to all the memory cells. Accordingly, since the MONOS type memory cell is utilized as a one bit/cell memory cell and a conventional array configuration is employed, the manufacturing process and the configuration can be simplified.