SILICON SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an improved silicon single crystal substrate possessing an IG (intrinsic gettering) capability very superior beyond the prior art silicon single crystal substrate and capable of satisfactorily dealing with the following generation and next to the following generation semiconductor device. SOLUTION: The silicon single crystal substrate includes a crystal region having in-crystal holes from which one or more of silicon atoms are released from a crystal lattice point, in-crystal defects having an inner diameter of the size of≤50 nm where at least≥1 atoms among the group of elements involving O, N or C excepting silicon are separated in the in-crystal vacancy, or a composite of the foregoing defects and the holes, at density of≥1×108/cm3. COPYRIGHT: (C)2004,JPO&NCIPI