ELECTROSTATIC DISCHARGE CIRCUIT AND METHOD THEREFOR
摘要
An ESD protection circuit (81) and a method for providing ESD protection is provided. In some embodiments, an N-channel transistor (24), which can be ESD damaged, is selectively turned on and made conducting. The purpose of turning on the N-channel transistor (24) is to maximize the Vt1 of the N-channel transistor (24). Vt1 is the drain-to-source voltage point at which the parasitic bipolar action of the N-channel transistor (24) first occurs. In some embodiments, the ESD protection circuit (81) includes a diode (64) which provides an additional current path from the I/O pad 31 to a first power supply node (76).
申请公布号
WO2004068543(A2)
申请公布日期
2004.08.12
申请号
WO2004US01225
申请日期
2004.01.16
申请人
MOTOROLA, INC.;KHAZHINSKY, MICHAEL, G.;MILLER, JAMES, W.;STOCKINGER, MICHAEL
发明人
KHAZHINSKY, MICHAEL, G.;MILLER, JAMES, W.;STOCKINGER, MICHAEL