| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily form a lower electrode of an MIM type capacity element. <P>SOLUTION: A metallic film 291, an interlayer insulating film 151, a metallic film 292, and an interlayer insulating film 152 are successively deposited on a silicon nitride film 28. Apertures 32a for exposing a contact metal 27 arranged on a position where a lower electrode is to be formed are formed through the interlayer insulating films 151, 152 and the metallic films 291, 292. A metallic film 293 covering the interlayer insulating film 152 is formed while filling the apertures 32a with the film 293. A main part of the lower electrode and a most upper side (i.e. separated farthest away from a substrate 100) fin are formed by the metallic film 293 in the same process. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
