| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable magnetic storage element provided with a storage element having MTJ (magnetic tunnel junction) capable of improving the bit switching characteristic of an MRAM (magnetic random access memory) by reducing the dispersion of holding power (Hc) of a ferromagnetic free layer and having no writing error. SOLUTION: The magnetic storage cell is provided with a 1st wiring (not shown), a 2nd wiring (bit line) 12 three-dimensionally intersecting with the 1st wiring, and a storage cell 13 for recording/reproducing the information of magnetic spin on an intersecting area between the 1st wiring and the 2nd wiring 12. A partial side face to be electrically connected to the storage cell 13 of the 2nd wiring (bit line) 12 has a forward taper shape whose contact angle from the upper surface of the storage element 13 is≥45°. COPYRIGHT: (C)2004,JPO&NCIPI
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