发明名称 |
Method of fabricating shallow trench isolation |
摘要 |
A method of fabricating shallow trench isolation. In the method, a refill step of oxide layer and a step of forming a sacrificial layer on the semiconductor substrate are applied after filling insulating layer into the shallow trenches. The purpose of the steps is to protect the oxide layer on the semiconductor substrate and the corner of the shallow trenches, used to isolate the STI.
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申请公布号 |
US6774007(B2) |
申请公布日期 |
2004.08.10 |
申请号 |
US20020244988 |
申请日期 |
2002.09.17 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LIU HSIEN-WEN;MAO HUI MIN;CHEN YI-NAN;CHEN YI-CHEN |
分类号 |
H01L21/76;H01L21/762;H01L27/148;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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