TUNNELING MAGNETORESISTIVE DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A tunneling MR(MagnetoResistive) device and a manufacturing method thereof are provided to improve MR property and thermal stability by using a barrier layer with low roughness and defect, and high uniformity and by controlling the constituent of a barrier layer. CONSTITUTION: A magnetization-orientation fixed layer is deposited on a substrate. An amorphous ZrAl layer is deposited on the magnetization-orientation fixed layer. The amorphous ZrAl layer contains Zr of 2 to 20 %. An amorphous ZrAlOx layer as a barrier layer is formed by exposing the amorphous ZrAl layer to oxygen gas. A magnetization-orientation variable free-layer is deposited on the amorphous ZrAlOx barrier layer.