METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a metal line of a semiconductor device is provided to prevent short of an upper metal line, to restrain scratch of an IMD(Inter Metal Dielectric) and voids of a tungsten film, and to detect easily an end point in a CMP(Chemical Mechanical Polishing) process by using a nitride layer. CONSTITUTION: A contact hole for exposing partially a substrate(21) is formed by etching selectively a nitride layer(23) and an insulating layer(22). A barrier metal(25) is formed on the nitride layer including the contact hole and a tungsten film(26) is deposited thereon. A contact plug is formed in the contact hole by removing the tungsten film and the barrier layer using CMP until the nitride layer is exposed.