ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An isolation structure of a semiconductor device and a manufacturing method thereof are provided to improve the degree of integration by forming a trench like a reverse triangle. CONSTITUTION: A pad oxide layer(12), a nitride layer(13) and a photoresist pattern having a relatively narrow opening width compared to a conventional photoresist pattern are sequentially formed on a silicon substrate(11). The substrate is selectively etched by using the photoresist pattern as an etching mask until a reverse triangle-type trench(T) is formed in the substrate. By performing dry-etching or wet-etching, an opening width of the nitride layer become larger than that of the trench. Then, the trench is filled with a gap-fill oxide layer(16).