发明名称 |
Element formation substrate, method of manufacturing the same, and semiconductor device |
摘要 |
A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the oxide film are selectively etched from a surface opposite to the major surface of the active-layer-side substrate to a halfway depth of the buried oxide film formed from the thermal oxide films at the bonding portion. A sidewall insulating film is formed on the etching side surface portion of the active-layer-side substrate. Then, the remaining buried oxide film except that immediately under the active-layer-side substrate is selectively etched. A single-crystal semiconductor layer is formed on the support-side substrate exposed by removing the buried oxide film.
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申请公布号 |
US2004150044(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030407677 |
申请日期 |
2003.04.07 |
申请人 |
NAGANO HAJIME;NITTA SHINICHI;YAMADA TAKASHI;SATO TSUTOMU;TANZAWA KATSUJIRO;MIZUSHIMA ICHIRO |
发明人 |
NAGANO HAJIME;NITTA SHINICHI;YAMADA TAKASHI;SATO TSUTOMU;TANZAWA KATSUJIRO;MIZUSHIMA ICHIRO |
分类号 |
H01L21/00;H01L21/02;H01L21/20;H01L21/322;H01L21/336;H01L21/76;H01L21/762;H01L21/8242;H01L21/84;H01L27/01;H01L27/08;H01L27/10;H01L27/108;H01L27/12;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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