发明名称 PROCESS FOR FABRICATING ORGANIC THIN FILM TRANSISTOR ELEMENT, ORGANIC THIN FILM TRANSISTOR ELEMENT FABRICATED BY THAT PROCESS, AND ORGANIC THIN FILM TRANSISTOR ELEMENT SHEET
摘要 PROBLEM TO BE SOLVED: To provide an organic thin film transistor element in which deterioration of transistor characteristics due to aging or bending is suppressed by suppressing the deterioration of transistor characteristics in the fabrication process, and to provide an organic thin film transistor element sheet and a process for fabricating an organic thin film transistor. SOLUTION: The process for fabricating an organic thin film transistor comprises a step for forming an organic semiconductor protective layer 3 in contact with an organic semiconductor layer 6, and a step for removing the organic semiconductor protective layer 3 from a part for forming a source electrode 4 and a drain electrode 5. In the process for forming the source electrode 4 and the drain electrode 5, the source electrode 4 and the drain electrode 5 are formed in contact with a part of organic semiconductor layer 6 from where the organic semiconductor protective layer 3 is removed. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004221562(A) 申请公布日期 2004.08.05
申请号 JP20030429037 申请日期 2003.12.25
申请人 KONICA MINOLTA HOLDINGS INC 发明人 HIRAI KATSURA
分类号 H01L29/417;G09F9/30;H01L21/336;H01L29/786;H01L51/00;H01L51/05;H01L51/40;(IPC1-7):H01L29/786 主分类号 H01L29/417
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