发明名称 FABRICATION METHOD OF THIN FILM ELEMENT, THIN FILM TRANSISTOR CIRCUIT BOARD, ACTIVE MATRIX-TYPE DISPLAY DEVICE, ELECTROOPTIC DEVICE AND ELECTRONIC APPARATUS, ESPECIALLY RELATED TO TRANSCRIBING ELEMENT CHIPS INCLUDING AT LEAST ONE OF PLURAL FUNCTIONAL ELEMENTS FORMED ON THE FIRST SUBSTRATE INTO THE SECOND SUBSTRATE
摘要 PURPOSE: A fabrication method of a thin film element, a TFT circuit board, an active matrix-type display device, and an electrooptic device and an electronic apparatus are provided to include a process of transcribing element chips including at least one of plural functional elements formed on the first substrate into the second substrate, consequently an outer shape of the element chips is rectangular. CONSTITUTION: Functional elements are formed on the first substrate, while wires are formed on the second substrate(21). Element chips(14) including more than one functional element are exfoliated from the first substrate, and are transcribed into the second substrate(21). The second substrate(21) is used in curved shape. TFTs are used as active matrix elements. Since the second substrate(21) or the wires can be curved, the element chips(14) are prevented from being exfoliated from the second substrate(21) and being split.
申请公布号 KR20040069265(A) 申请公布日期 2004.08.05
申请号 KR20040002995 申请日期 2004.01.15
申请人 SEIKO EPSON CORPORATION 发明人 KIMURA MUTSUMI
分类号 G02F1/1345;G02F1/1333;G02F1/1362;G02F1/1368;H01L21/336;H01L21/68;H01L21/77;H01L21/84;H01L23/00;H01L23/12;H01L23/538;H01L29/06;H01L29/786;(IPC1-7):G02F1/133 主分类号 G02F1/1345
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