| 摘要 |
A lower cladding layer of n-(Al0.66Ga0.34)0.5In0.5P, an active layer having a window structure which has an MQW structure disordered, a first upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P, and a second upper cladding layer of (Al0.66Ga0.34)0.5In0.5P are sequentially disposed on an n-GaAs substrate. A refractive index of the first upper cladding layer is set to a value smaller than that of the lower cladding layer, and a refractive index of the second upper cladding layer is set to a value larger than that of the first upper cladding layer and identical to that of the lower cladding layer, whereby a peak position of a light intensity at the window structure of the active layer is set so as to coincide with or extremely approach the position of the active layer.
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