| 摘要 |
PROBLEM TO BE SOLVED: To reduce the leakage current of a semiconductor integrated circuit constituted of an MT-CMOS (Multi-Threshold Complementary MOS). SOLUTION: Among high-threshold field effect transistors NM11, NM12, ..., NM1n, NM21, NM22, ..., NM2n, ..., NMm1, NMm2, ..., NMmn; those wherein current should be caused to flow are selected by switching circuits SW1, SW2, ..., SWn whose opening and closing conditions are determined according to a change in process. As conduction current becomes large, the number of high-threshold field effect transistors to be selected is decreased among the high-threshold field effect transistors NM11, NM12, ..., NM1n, NM21, NM22, ..., NM2n, ..., NMm1, NMm2, ..., NMmn. COPYRIGHT: (C)2004,JPO&NCIPI
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