Method for depositing a low dielectric constant film

摘要

A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes at least one silicon oxycarbide layer and at least one substantially silicon-free layer comprising carbon and hydrogen. The layers are deposited from a gas mixture including an organosilicon compound and a silicon-free hydrocarbon-based compound. The low dielectric constant film is deposited by a plasma process than includes pulses of RF power.