| 摘要 |
PROBLEM TO BE SOLVED: To provide a peeling method that can easily break away any of all layers to be removed, and also a peeling method applicable to any type of substrate from the standpoint of the formation of a layer to be removed. SOLUTION: The peeling method of this invention is as follows. The impression molding of a semiconductor film including a metal film, a primary oxide on this film and hydrogen on this primary oxide is performed. After the layer to be removed including the above-mentioned primary oxide and semiconductor film is adhered to a base material, the layer to be removed, which is adhered to the above-mentioned base material, is separated by a physical means from a substrate where the above-mentioned metal film is mounted. And, after heat treatment is performed to diffuse hydrogen included in the above-mentioned semiconductor film, the secondary oxide formed in the interface between the above-mentioned metal film and primary oxide is reduced to form a tertiary oxide. Peeling is made inside the film including the above-mentioned secondary oxide and tertiary oxide, in the interface between the above-mentioned secondary and tertiary oxide combined and the above-mentioned metal film, or in the interface between the above-mentioned secondary and tertiary oxide combined and the above-mentioned primary oxide. That is the main feature of the peeling method. COPYRIGHT: (C)2004,JPO&NCIPI
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