| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic thin film having a large ratio of spin polarization, and a magnetoresistive effect element using the same, and a magnetic device thereof. SOLUTION: The magnetic thin film includes a substrate 2 and a CO<SB>2</SB>Fe<SB>x</SB>Cr<SB>1-x</SB>Al thin film 3, and the CO<SB>2</SB>Fe<SB>x</SB>Cr<SB>1-x</SB>Al thin film 3 has one structure from an L2<SB>1</SB>, B2, and A2 structures, where 0≤x≤1. In a room temperature, the magnetic thin film shows ferromagnetism and can provide the large ratio of the spin polarization. A buffer layer 4 can be disposed between the substrate 2 and the CO<SB>2</SB>Fe<SB>x</SB>Cr<SB>1-x</SB>Al thin film 3. A tunnel magnetoresistive effect element using this magnetic thin film and a giant magnetoresistive effect element can provide large TMR and GMR in a low magnetic field in the room temperature. Furthermore, the magnetic device, a magnetic head, and a magnetic recording device using these magnetoresistive effect elements are provided. COPYRIGHT: (C)2004,JPO&NCIPI
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