发明名称 |
METHOD OF DETERMINING DEPOSITION TEMPERATURE |
摘要 |
A method of determining the deposition temperature, especially inside the reaction chamber of a chemical vapor deposition station. The method includes placing a deposition substrate inside the reaction chamber, forming a layer of metal silicide over the deposition substrate, measuring the silicon/metal atomic ratio and finding the deposition temperature according to a pre-determined temperature versus silicon/metal atomic ratio relationship. The method permits immediate determination as well as real-time monitoring of deposition temperature inside the station.
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申请公布号 |
US2004146643(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20030248500 |
申请日期 |
2003.01.24 |
申请人 |
CHOU SHIH-LIANG;WU TSUNG-CHIN;LIN TSUNG-DE;HONG TIAN-JUE;TSENG KOU-YOW;LIEN WEN-CHENG |
发明人 |
CHOU SHIH-LIANG;WU TSUNG-CHIN;LIN TSUNG-DE;HONG TIAN-JUE;TSENG KOU-YOW;LIEN WEN-CHENG |
分类号 |
C23C16/42;C23C16/52;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/42 |
代理机构 |
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