| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor photo detecting element wherein an electrode is formed on a resin layer and which can reduce the parasitic capacitance between the electrode and a photo detecting section while at the same time preventing disconnections of the electrode, and therefore can reduce the total capacitance. SOLUTION: The semiconductor photo detecting element comprises a substrate, a light absorption layer formed above the substrate, a photo detecting section having a pn junction formed inside the light absorption layer, contact electrode connected to a front surface of the photo detecting section, insulation layer formed being shifted in position from the photo detecting section, and an interconnection electrode extended from the contact electrode onto the insulation layer. The insulation layer has a tilted face wherein an angle formed by the top face and the end face is an obtuse one, at least in a part where the interconnection electrode is formed. COPYRIGHT: (C)2004,JPO&NCIPI
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