| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low dielectric constant film having a low dielectric constant and high stability of the constant, a method for manufacturing the same, and a semiconductor device with the same. <P>SOLUTION: The composition for a low dielectric constant film contains an alkali developable base resin, a sensitizer and a decomposable component capable of being decomposed or volatilization. The method for manufacturing a low dielectric constant film includes a mode in which the alkali developable base resin has phenolic hydroxy group in each molecule, and comprises a film forming step in which a film is formed using the composition for a low dielectric constant film, and a porosity providing step in which the film is made porous by at least one of heat treatment and irradiation with ionizing radiation; wherein the film is preferably formed by applying the composition for a low dielectric constant film on a substrate, a pattern forming step in which a pattern is formed by selectively exposing and developing the film is preferably carried out after the image forming step and before porosity providing step, and the film is preferably hardened in the porosity providing step. This invention also includes a low dielectric constant film formed by the method for manufacturing a low dielectric constant film and a semiconductor device with the low dielectric constant film. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
