发明名称 |
Shallow trench isolation |
摘要 |
A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
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申请公布号 |
US2004147090(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20030351472 |
申请日期 |
2003.01.23 |
申请人 |
SILTERRA MALAYSIA SDN. BHD. |
发明人 |
KIM INKI;KIM SANG YEON;PAEK MIN;GHEE CH?APOS,NG TOH;RAJAGOPAL RAMAKRISHNAN;PIN CHIEW SIN;LEE WAN GIE;CHIEN CHOONG SHIAU;TAY CHARLIE;LEE CHANG GI;WATANABE HITOMI;INOUE NAOTO |
分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L21/336;H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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